Efficient Single - Heterojunction Alo . 27 Gao . 73 As / GaAs p - i - n Photodiodes with 22 - GHz Bandwidths

We report on the design, fabrication, testing, and modeling of single-heterojunction AI,,.?, Ga,,73As/GaAs p-i-n photodiodes for Manuscript received July 3, 1990; revised February I , 1991. The review of this brief was arranged by Associate Editor G. Craford. C. Johnsen, S . Sloan, D. Braun, M. Zurakowski. M. Lightner, F. Kell e r t . and G. Patterson are with the Microwave Technology Division, Hewleft-Packard Company, Santa Rosa. CA 95403. J . L. Russell was with the Microwave Technology Division, HewlettPdckard Company, Santa Rosa, CA 95403. He is now with the Department of Electrical Engineering, Ohio State University, Columbus. OH 43206. R. Koo is with the Signal Analysis Division. Hewlett-Packard Company, Rohnert Park, CA 94928. D. Derickson and J . Bowers are with the Department of Electrical and Computer Engineering, University of California, Santa Barbara. CA 93 106. IEEE Log Number 9100806. 0018-9383~91/0800-1968$01 .OO O 1991 IEEE IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 38. NO. 8. AUGUST u+eas components in optical receivers. The photodiodes are grown by molecular beam epitaxy and fabricated as 1100-pm2 mesa structures. At 5-V reverse bias and 850 nm, we typically measure 100 f F of capacitance, 90 pA of leakage current, 73% external quantum efficiency, <2% reflectivity, and ZZ-GHLbandwidths.